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IRFZ4 EG200 MX25U TA143 0PS48 ATF1508 MGFC5 APT30
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 INFRA-RED
1. 2. 2.1 2.2
Item No.: 126244
This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed) Structure Mesa structure Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy
3.
Outlines (dimensions in microns)
p-Electrode p-Epitaxy GaAlAs 365 120 160 typ. Active Layer n-Epitaxy GaAlAs n-Electrode
365 Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25C)
Parameter
Forward voltage Reverse voltage output Power Switching time
Symbol
VF VR e tr, tf
Conditions
IF = 20 mA IR = 10 A IF = 20 mA IF = 50 mA IF = 20 mA
min
5 2,6 6,5
typ
1,30 3,0 7,5 20 870
max
1,50
Unit
V V mW ns nm
Peak wavelength P IF = 20 mA Power measurement at OSA on gold plate 5. Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. e typ min max Quantity
(c) 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com


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